TSM150NB04LCV RGG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 36A, SINGLE N-CHANNEL POWER
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
| Кількість | Ціна |
|---|---|
| 5000+ | 15.55 грн |
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Технічний опис TSM150NB04LCV RGG Taiwan Semiconductor Corporation
Description: 40V, 36A, SINGLE N-CHANNEL POWER, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.9W (Ta), 39W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-PDFN (3.15x3.1).
Інші пропозиції TSM150NB04LCV RGG за ціною від 15.72 грн до 68.04 грн
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TSM150NB04LCV RGG | Taiwan Semiconductor Corporation |
Description: 40V, 36A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (3.15x3.1) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.9W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 9938 шт: термін постачання 21-31 дні (днів) |
|
| TSM150NB04LCV RGG |
|
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 36A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: 40V, 36A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PDFN (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 9938 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.04 грн |
| 10+ | 40.53 грн |
| 100+ | 26.43 грн |
| 500+ | 19.11 грн |
| 1000+ | 17.27 грн |
| 2000+ | 15.72 грн |