TSM1NB60CH C5G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: MOSFET N-CHANNEL 600V 1A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
на замовлення 14962 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 79.99 грн |
| 75+ | 33.03 грн |
| 150+ | 29.36 грн |
| 525+ | 22.65 грн |
| 1050+ | 20.52 грн |
| 2025+ | 18.82 грн |
| 5025+ | 16.60 грн |
| 10050+ | 15.41 грн |
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Технічний опис TSM1NB60CH C5G Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 1A TO251, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V.
Інші пропозиції TSM1NB60CH C5G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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TSM1NB60CH C5G | Виробник : Taiwan Semiconductor |
Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) TO-251 Tube |
товару немає в наявності |
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TSM1NB60CH C5G | Виробник : Taiwan Semiconductor |
MOSFETs 600V, 1A, Single N-Channel Power MOSFET |
товару немає в наявності |
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| TSM1NB60CH C5G | Виробник : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 39W Case: IPAK Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: THT Gate charge: 6.1nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |