TSM200N03DPQ33 Taiwan Semiconductor Corporation

Description: MOSFET 2N-CH 30V 20A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 25V, Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (3x3).