TSM220NB06LCR RLG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 8A/35A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PDFN (5.2x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.46 грн |
| 10+ | 54.80 грн |
| 100+ | 36.08 грн |
| 500+ | 26.32 грн |
| 1000+ | 23.89 грн |
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Технічний опис TSM220NB06LCR RLG Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 8A/35A 8PDFN, Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PDFN (5.2x5.75), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 68W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR).
Інші пропозиції TSM220NB06LCR RLG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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TSM220NB06LCR RLG | Taiwan Semiconductor |
Trans MOSFET N-CH 60V 35A 8-Pin PDFN EP T/R |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
|
|
TSM220NB06LCR RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 8A/35A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PDFN (5.2x5.75) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
 |
TSM220NB06LCR RLG | Taiwan Semiconductor |
MOSFETs 60V, 35A, Single N-Channel Power MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM220NB06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 23W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 23nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM220NB06LCR RLG |
|
Виробник: Taiwan Semiconductor
Trans MOSFET N-CH 60V 35A 8-Pin PDFN EP T/R
Trans MOSFET N-CH 60V 35A 8-Pin PDFN EP T/R
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TSM220NB06LCR RLG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 8A/35A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PDFN (5.2x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 8A/35A 8PDFN
Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PDFN (5.2x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TSM220NB06LCR RLG |
|
Виробник: Taiwan Semiconductor
MOSFETs 60V, 35A, Single N-Channel Power MOSFET
MOSFETs 60V, 35A, Single N-Channel Power MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| TSM220NB06LCR RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 23W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 23W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.