TSM220NB06LCR RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 60V 8A/35A 8PDFN, Input Capacitance (Ciss) (Max) @ Vds: 1314 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PDFN (5.2x5.75), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 68W (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerLDFN, Packaging: Tape & Reel (TR).