TSM2301BCX RFG

TSM2301BCX RFG Taiwan Semiconductor Corporation



Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис TSM2301BCX RFG Taiwan Semiconductor Corporation

Description: MOSFET P-CHANNEL 20V 2.8A SOT23, Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), FET Type: P-Channel.

Інші пропозиції TSM2301BCX RFG

Фото Назва Виробник Інформація Доступність
Ціна
TSM2301BCX RFG TSM2301BCX RFG Виробник : Taiwan Semiconductor Corporation Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
TSM2301BCX RFG TSM2301BCX RFG Виробник : Taiwan Semiconductor TSM2301B_B15-1116223.pdf MOSFET 20V P channel Mosfet
товару немає в наявності
В кошику  од. на суму  грн.