TSM2301CX RFG Taiwan Semiconductor Co., Ltd.
Виробник: Taiwan Semiconductor Co., Ltd.
Tranzystor P-MOSFET; 20V; 12V; 190mOhm; 2,8A; 700mW; -55°C ~ 150°C; Odpowiednik: TSM2301CX RF; TSM2301CX-RFG; TSM2301ACX; TSM2301BCX RFG; TSM2301ACX RFG; Zamiennikiem b?dzie: TSM650P02CX; TSM2301ACX RFG TTSM2301cx
на замовлення 3000 шт:
термін постачання 28-31 дні (днів)
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Технічний опис TSM2301CX RFG Taiwan Semiconductor Co., Ltd.
Description: MOSFET P-CHANNEL 20V 2.8A SOT23, Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 950mV @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції TSM2301CX RFG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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TSM2301CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 2.8A SOT23 Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
TSM2301CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET P-CHANNEL 20V 2.8A SOT23 Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM2301CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TSM2301CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CHANNEL 20V 2.8A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.