TSM2312CX RFG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 4.9A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис TSM2312CX RFG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 4.9A SOT23, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 750mW (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції TSM2312CX RFG за ціною від 16.79 грн до 70.70 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TSM2312CX RFG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 4.9A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V |
на замовлення 152875 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
TSM2312CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 33mΩ Mounting: SMD Gate charge: 14nC Kind of package: tape Kind of channel: enhancement |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
|
||||||||||
| TSM2312CX RFG | Taiwan Semiconductor Co., Ltd. |
Trans MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R TSM2312CX RFG TTSM2312cx кількість в упаковці: 10 шт |
на замовлення 100 шт: термін постачання 28-31 дні (днів) |
|
| TSM2312CX RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 4.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Description: MOSFET N-CHANNEL 20V 4.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
на замовлення 152875 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.92 грн |
| 10+ | 36.05 грн |
| 100+ | 24.74 грн |
| 500+ | 18.38 грн |
| 1000+ | 16.79 грн |
| TSM2312CX RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; 480mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.70 грн |
| 11+ | 41.47 грн |
| TSM2312CX RFG |
|
Виробник: Taiwan Semiconductor Co., Ltd.
Trans MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R TSM2312CX RFG TTSM2312cx
кількість в упаковці: 10 шт
Trans MOSFET N-CH 20V 4.9A 3-Pin SOT-23 T/R TSM2312CX RFG TTSM2312cx
кількість в упаковці: 10 шт
на замовлення 100 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 17.49 грн |