Технічний опис TSM250N02DCQ Taiwan Semiconductor
Description: MOSFET 2N-CH 20V 5.8A 6TDFN, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 620mW (Tc), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 6-TDFN (2x2).
Інші пропозиції TSM250N02DCQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| TSM250N02DCQ | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 20V 5.8A 6TDFN Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 620mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 6-TDFN (2x2) |
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