TSM2537CQ RFG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 20V 11.6A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TDFN (2x2)
| Кількість | Ціна |
|---|---|
| 3000+ | 15.17 грн |
| 6000+ | 13.44 грн |
| 9000+ | 12.84 грн |
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Технічний опис TSM2537CQ RFG Taiwan Semiconductor Corporation
Description: MOSFET N/P-CH 20V 11.6A 6TDFN, Packaging: Tape & Reel (TR), Package / Case: 6-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 6.25W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V, FET Feature: Logic Level Gate, 1.8V Drive, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-TDFN (2x2).
Інші пропозиції TSM2537CQ RFG за ціною від 12.64 грн до 65.17 грн
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TSM2537CQ RFG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET N/P-CH 20V 11.6A 6TDFN Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 6.25W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TDFN (2x2) |
на замовлення 9694 шт: термін постачання 21-31 дні (днів) |
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TSM2537CQ RFG | Виробник : Taiwan Semiconductor |
MOSFETs 20V, 13A, -20V, -9.5A, Complementary N & P-Channel Power MOSFET |
на замовлення 18658 шт: термін постачання 21-30 дні (днів) |
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