TSM260P02CX RFG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: -20V, -6.5A, SINGLE P-CHANNEL PO
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.56W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
| Кількість | Ціна |
|---|---|
| 3000+ | 12.93 грн |
| 6000+ | 11.43 грн |
| 9000+ | 10.90 грн |
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Технічний опис TSM260P02CX RFG Taiwan Semiconductor Corporation
Description: -20V, -6.5A, SINGLE P-CHANNEL PO, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.56W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V.
Інші пропозиції TSM260P02CX RFG за ціною від 11.22 грн до 60.15 грн
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TSM260P02CX RFG | Виробник : Taiwan Semiconductor Corporation |
Description: -20V, -6.5A, SINGLE P-CHANNEL PO Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V |
на замовлення 12001 шт: термін постачання 21-31 дні (днів) |
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TSM260P02CX RFG | Виробник : Taiwan Semiconductor |
MOSFETs -20V, -6.5A, Single P-Channel Power MOSFET |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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