TSM300NB06LDCR RLG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU
Part Status: Active
Supplier Device Package: 8-PDFNU (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta), 40W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 31.19 грн |
| 5000+ | 28.61 грн |
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Технічний опис TSM300NB06LDCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU, Part Status: Active, Supplier Device Package: 8-PDFNU (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 2W (Ta), 40W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції TSM300NB06LDCR RLG за ціною від 26.89 грн до 121.11 грн
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TSM300NB06LDCR RLG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 60V 5A/24A 8PDFNU Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta), 40W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TSM300NB06LDCR RLG | Виробник : Taiwan Semiconductor | MOSFETs 60V, 24A, Dual N-Channel Power MOSFET |
на замовлення 4490 шт: термін постачання 21-30 дні (днів) |
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