TSM320N03CX RFG TAIWAN SEMICONDUCTOR

Description: 30V, 5.5A, SINGLE N-CHANNEL POWE, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.5A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V, Power Dissipation (Max): 1W (Ta), 1.8W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 792 pF @ 15 V.