TSM340N06CH X0G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 30A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V
| Кількість | Ціна |
|---|---|
| 4+ | 81.49 грн |
| 10+ | 48.99 грн |
| 100+ | 32.16 грн |
| 500+ | 23.38 грн |
| 1000+ | 21.19 грн |
| 3750+ | 17.93 грн |
| 7500+ | 16.33 грн |
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Технічний опис TSM340N06CH X0G Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 30A TO251, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V.
Інші пропозиції TSM340N06CH X0G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
TSM340N06CH X0G | Taiwan Semiconductor |
MOSFETs 60V, 25A, Single N-Channel Power MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM340N06CH X0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK Case: IPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Polarisation: unipolar Gate charge: 16.6nC On-state resistance: 34mΩ Drain current: 19A Power dissipation: 40W Gate-source voltage: ±20V Drain-source voltage: 60V |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM340N06CH X0G |
|
Виробник: Taiwan Semiconductor
MOSFETs 60V, 25A, Single N-Channel Power MOSFET
MOSFETs 60V, 25A, Single N-Channel Power MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| TSM340N06CH X0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 16.6nC
On-state resistance: 34mΩ
Drain current: 19A
Power dissipation: 40W
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 16.6nC
On-state resistance: 34mΩ
Drain current: 19A
Power dissipation: 40W
Gate-source voltage: ±20V
Drain-source voltage: 60V
товару немає в наявності
В кошику
од. на суму грн.