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TSM340N06CH X0G Taiwan Semiconductor

Name: TSM340N06CH X0G
Brand: Taiwan Semiconductor
SKU: 150073-4
Price: 302550 UAH
Availability: BackOrder

Виробник: Taiwan Semiconductor
Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-251S Tube

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В кошику од. на суму грн.

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Технічний опис TSM340N06CH X0G Taiwan Semiconductor

Description: MOSFET N-CHANNEL 60V 30A TO251, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V.

Інші пропозиції TSM340N06CH X0G

Назва	Виробник	Інформація	Доступність	Ціна
TSM340N06CH X0G	Виробник : Taiwan Semiconductor Corporation	Description: MOSFET N-CHANNEL 60V 30A TO251 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 30 V	товару немає в наявності	В кошику од. на суму грн.
TSM340N06CH X0G	Виробник : Taiwan Semiconductor	MOSFETs 60V, 25A, Single N-Channel Power MOSFET	товару немає в наявності	В кошику од. на суму грн.
TSM340N06CH X0G	Виробник : TAIWAN SEMICONDUCTOR	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK Type of transistor: N-MOSFET Case: IPAK Drain-source voltage: 60V Drain current: 19A On-state resistance: 34mΩ Power dissipation: 40W Polarisation: unipolar Kind of package: tube Gate charge: 16.6nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT	товару немає в наявності	В кошику од. на суму грн.