TSM3446CX6 RFG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 5.3A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 26.75 грн |
| 6000+ | 23.98 грн |
| 15000+ | 23.10 грн |
| 30000+ | 20.92 грн |
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Технічний опис TSM3446CX6 RFG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 5.3A SOT26, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-26, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 5.3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції TSM3446CX6 RFG за ціною від 26.68 грн до 70.97 грн
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TSM3446CX6 RFG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 5.3A SOT26 Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 34384 шт: термін постачання 21-31 дні (днів) |
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TSM3446CX6 RFG | Taiwan Semiconductor |
MOSFET 20V, 5.3A, Single N-Channel Power MOSFET |
на замовлення 11000 шт: термін постачання 21-30 дні (днів) |
|
| TSM3446CX6 RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 5.3A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CHANNEL 20V 5.3A SOT26
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 34384 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 68.83 грн |
| 10+ | 58.66 грн |
| 100+ | 44.95 грн |
| 500+ | 33.35 грн |
| 1000+ | 26.68 грн |
| TSM3446CX6 RFG |
|
Виробник: Taiwan Semiconductor
MOSFET 20V, 5.3A, Single N-Channel Power MOSFET
MOSFET 20V, 5.3A, Single N-Channel Power MOSFET
на замовлення 11000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.97 грн |
| 10+ | 61.38 грн |
| 100+ | 40.93 грн |
| 500+ | 32.35 грн |