TSM4424CS RVG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 8A 8SOP
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
| Кількість | Ціна |
|---|---|
| 8+ | 43.51 грн |
| 10+ | 36.87 грн |
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Технічний опис TSM4424CS RVG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 8A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 20 V.
Інші пропозиції TSM4424CS RVG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
TSM4424CS RVG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 8A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 20 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
TSM4424CS RVG | Taiwan Semiconductor | MOSFET 20V, 8A, Single N-Channel Power MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM4424CS RVG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 8A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET N-CHANNEL 20V 8A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 20 V
товару немає в наявності
В кошику
од. на суму грн.
| TSM4424CS RVG |
Виробник: Taiwan Semiconductor
MOSFET 20V, 8A, Single N-Channel Power MOSFET
MOSFET 20V, 8A, Single N-Channel Power MOSFET
товару немає в наявності
В кошику
од. на суму грн.

