Технічний опис TSM4806CS RLG Taiwan Semiconductor
Description: MOSFET N-CHANNEL 20V 28A 8SOP, Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції TSM4806CS RLG за ціною від 12.84 грн до 37.89 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TSM4806CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±8V On-state resistance: 20mΩ Mounting: SMD Gate charge: 12.3nC Kind of package: tape Kind of channel: enhancement |
на замовлення 161 шт: термін постачання 14-30 дні (днів) |
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TSM4806CS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 20V 28A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 4820 шт: термін постачання 21-31 дні (днів) |
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TSM4806CS RLG | Taiwan Semiconductor | MOSFETs 20V, 28A, Single N-Channel Power MOSFET |
на замовлення 6066 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| TSM4806CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±8V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±8V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 12.3nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 161 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.64 грн |
| 17+ | 25.07 грн |
| 100+ | 19.61 грн |
| TSM4806CS RLG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 20V 28A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CHANNEL 20V 28A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 4820 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.89 грн |
| 10+ | 30.97 грн |
| 100+ | 21.55 грн |
| 500+ | 15.79 грн |
| 1000+ | 12.84 грн |
| TSM4806CS RLG |
Виробник: Taiwan Semiconductor
MOSFETs 20V, 28A, Single N-Channel Power MOSFET
MOSFETs 20V, 28A, Single N-Channel Power MOSFET
на замовлення 6066 шт:
термін постачання 21-30 дні (днів)