Технічний опис TSM4936DCS RLG Taiwan Semiconductor
Description: MOSFET 2N-CH 30V 5.9A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V, Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active.
Інші пропозиції TSM4936DCS RLG за ціною від 16.96 грн до 84.65 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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TSM4936DCS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 30V 5.9A 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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TSM4936DCS RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.9A Power dissipation: 2.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 13nC Kind of package: tape Kind of channel: enhancement |
на замовлення 225 шт: термін постачання 14-30 дні (днів) |
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TSM4936DCS RLG | Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 30V 5.9A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 26223 шт: термін постачання 21-31 дні (днів) |
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TSM4936DCS RLG | Taiwan Semiconductor |
Trans MOSFET N-CH 30V 6A 8-Pin SOP T/R |
на замовлення 68 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 68 шт В кошику од. на суму грн. | ||||||||||
| TSM4936DCS RLG | Taiwan Semiconductor Co., Ltd. |
Transistor 2xN-Channel MOSFET; 30V; 20V; 53mOhm; 5,9A; 3W; -55°C ~ 150°C; TSM4936DCS RLG TSM4936DCS TTSM4936dcsкількість в упаковці: 25 шт |
на замовлення 50 шт: термін постачання 28-31 дні (днів) |
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| TSM4936DCS RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 18.75 грн |
| 5000+ | 17.89 грн |
| TSM4936DCS RLG |
![]() |
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.9A
Power dissipation: 2.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.9A
Power dissipation: 2.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 225 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.64 грн |
| 12+ | 34.73 грн |
| 25+ | 30.83 грн |
| 100+ | 27.67 грн |
| TSM4936DCS RLG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 26223 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 84.65 грн |
| 10+ | 51.15 грн |
| 100+ | 33.74 грн |
| 500+ | 24.64 грн |
| 1000+ | 22.38 грн |
| TSM4936DCS RLG |
![]() |
Виробник: Taiwan Semiconductor
Trans MOSFET N-CH 30V 6A 8-Pin SOP T/R
Trans MOSFET N-CH 30V 6A 8-Pin SOP T/R
на замовлення 68 шт:
термін постачання 21-31 дні (днів)
| TSM4936DCS RLG |
![]() |
Виробник: Taiwan Semiconductor Co., Ltd.
Transistor 2xN-Channel MOSFET; 30V; 20V; 53mOhm; 5,9A; 3W; -55°C ~ 150°C; TSM4936DCS RLG TSM4936DCS TTSM4936dcs
кількість в упаковці: 25 шт
Transistor 2xN-Channel MOSFET; 30V; 20V; 53mOhm; 5,9A; 3W; -55°C ~ 150°C; TSM4936DCS RLG TSM4936DCS TTSM4936dcs
кількість в упаковці: 25 шт
на замовлення 50 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 16.96 грн |





