TSM4NB60CI C0G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ITO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 2+ | 189.60 грн |
| 10+ | 164.02 грн |
| 100+ | 131.84 грн |
| 500+ | 101.65 грн |
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Технічний опис TSM4NB60CI C0G Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 4A ITO220AB, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: ITO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V.
Інші пропозиції TSM4NB60CI C0G за ціною від 128.47 грн до 207.90 грн
| Фото | Назва | Виробник | Інформація |
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TSM4NB60CI C0G | Виробник : Taiwan Semiconductor |
MOSFET 600V, 4A, Single N-Channel Power MOSFET |
на замовлення 3455 шт: термін постачання 21-30 дні (днів) |
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TSM4NB60CI C0G | Виробник : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.4A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 14.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |