TSM4NB65CH C5G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 650V 4A TO251
Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.46 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 3.37Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 5+ | 73.06 грн |
| 75+ | 56.48 грн |
| 150+ | 44.76 грн |
| 525+ | 35.60 грн |
| 1050+ | 29.00 грн |
| 2025+ | 27.30 грн |
| 5025+ | 25.58 грн |
| 10050+ | 24.39 грн |
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Технічний опис TSM4NB65CH C5G Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 650V 4A TO251, Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13.46 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-251 (IPAK), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 70W (Tc), Rds On (Max) @ Id, Vgs: 3.37Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції TSM4NB65CH C5G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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TSM4NB65CH C5G | Виробник : Taiwan Semiconductor |
MOSFET 650V N channel Mosfet |
товару немає в наявності |