TSM5055DCR RLG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: MOSFET 2N-CH 30V 107A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 15V, 2550pF @ 15V
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V, 49nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 36.63 грн |
| 5000+ | 33.59 грн |
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Технічний опис TSM5055DCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 107A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 15V, 2550pF @ 15V, Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V, 49nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active.
Інші пропозиції TSM5055DCR RLG за ціною від 35.16 грн до 88.83 грн
| Фото | Назва | Виробник | Інформація |
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TSM5055DCR RLG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 30V 107A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 15V, 2550pF @ 15V Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V, 49nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TSM5055DCR RLG | Виробник : Taiwan Semiconductor |
MOSFET 30V, 107A, Dual N-Channel Power MOSFET;30V, 38A, Dual N-Channel Power MOSFET |
товар відсутній |