TSM600NA25CIT C0G Taiwan Semiconductor Corporation

Description: 250V 22A SINGLE N-CHAN, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 250µA, Supplier Device Package: ITO-220TL, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3086 pF @ 125 V.