TSM60NB099PW C1G Taiwan Semiconductor
| Кількість | Ціна |
|---|---|
| 1+ | 638.32 грн |
| 10+ | 539.43 грн |
| 25+ | 425.47 грн |
| 100+ | 391.01 грн |
| 250+ | 367.80 грн |
| 600+ | 344.60 грн |
| 1200+ | 310.14 грн |
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Технічний опис TSM60NB099PW C1G Taiwan Semiconductor
Description: MOSFET N-CHANNEL 600V 38A TO247, Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 329W (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції TSM60NB099PW C1G за ціною від 406.96 грн до 700.18 грн
| Фото | Назва | Виробник | Інформація |
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Ціна |
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TSM60NB099PW C1G | Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 38A TO247 Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 329W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 97 шт: термін постачання 21-31 дні (днів) |
|
| TSM60NB099PW C1G |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 38A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CHANNEL 600V 38A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 11.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 97 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 700.18 грн |
| 25+ | 406.96 грн |