TSM60NB190CF C0G Taiwan Semiconductor Corporation

Description: MOSFET N-CH 600V 18A ITO220S, Input Capacitance (Ciss) (Max) @ Vds: 1311 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ITO-220S, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 59.5W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 3.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.