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TSM60NB900CP ROG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: MOSFET N-CHANNEL 600V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Power Dissipation (Max): 36.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 106.61 грн |
| 10+ | 83.8 грн |
| 100+ | 65.14 грн |
| 500+ | 51.82 грн |
| 1000+ | 42.21 грн |
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Технічний опис TSM60NB900CP ROG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 4A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V, Power Dissipation (Max): 36.8W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252, (D-Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V.
Інші пропозиції TSM60NB900CP ROG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| TSM60NB900CP ROG | Виробник : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 36.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.4A Power dissipation: 36.8W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 9.6nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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TSM60NB900CP ROG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 600V 4A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V Power Dissipation (Max): 36.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252, (D-Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V |
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TSM60NB900CP ROG | Виробник : Taiwan Semiconductor |
MOSFET 600V 4Amp 0.9OHMS N channel Power Mosfet |
товар відсутній |
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| TSM60NB900CP ROG | Виробник : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 36.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.4A Power dissipation: 36.8W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 9.6nC Kind of channel: enhanced |
товар відсутній |