TSM60NC196CM2 RNG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: 600V, 28A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 152W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AB (D2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 151.10 грн |
| 1600+ | 124.59 грн |
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Технічний опис TSM60NC196CM2 RNG Taiwan Semiconductor Corporation
Description: 600V, 28A, SINGLE N-CHANNEL POWE, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V, Power Dissipation (Max): 152W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-263AB (D2PAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V.
Інші пропозиції TSM60NC196CM2 RNG за ціною від 163.69 грн до 250.08 грн
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TSM60NC196CM2 RNG | Виробник : Taiwan Semiconductor Corporation |
Description: 600V, 28A, SINGLE N-CHANNEL POWE Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 152W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263AB (D2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V |
на замовлення 2397 шт: термін постачання 21-31 дні (днів) |
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TSM60NC196CM2 RNG | Виробник : Taiwan Semiconductor |
Trans MOSFET N-CH 600V 28A 3-Pin(2+Tab) D2PAK |
товару немає в наявності |