TSM60NC1R5CH C5G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 3A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 6+ | 56.96 грн |
| 75+ | 43.75 грн |
| 150+ | 34.67 грн |
| 525+ | 27.58 грн |
| 1050+ | 27.28 грн |
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Технічний опис TSM60NC1R5CH C5G Taiwan Semiconductor Corporation
Description: 600V, 3A, SINGLE N-CHANNEL POWER, Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-251 (IPAK), Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 39W (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.