TSM60NC390CI C0G Taiwan Semiconductor

Description: 600V, 11A, SINGLE N-CHANNEL POWE, Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: ITO-220, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 78W (Tc).