TSM60NC390CP ROG Taiwan Semiconductor
| Кількість | Ціна |
|---|---|
| 2+ | 223.99 грн |
| 10+ | 143.96 грн |
| 100+ | 86.50 грн |
| 500+ | 70.18 грн |
| 1000+ | 65.33 грн |
| 2500+ | 62.17 грн |
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Технічний опис TSM60NC390CP ROG Taiwan Semiconductor
Description: 600V, 11A, SINGLE N-CHANNEL POWE, Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції TSM60NC390CP ROG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
TSM60NC390CP ROG | Taiwan Semiconductor Corporation |
Description: 600V, 11A, SINGLE N-CHANNEL POWEInput Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
|
TSM60NC390CP ROG | Taiwan Semiconductor Corporation |
Description: 600V, 11A, SINGLE N-CHANNEL POWEInput Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM60NC390CP ROG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TSM60NC390CP ROG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: 600V, 11A, SINGLE N-CHANNEL POWE
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.



