TSM60NC620CI C0G Taiwan Semiconductor
| Кількість | Ціна |
|---|---|
| 3+ | 146.04 грн |
| 10+ | 119.69 грн |
| 100+ | 82.98 грн |
| 250+ | 76.65 грн |
| 500+ | 69.34 грн |
| 1000+ | 62.73 грн |
| 2000+ | 54.50 грн |
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Технічний опис TSM60NC620CI C0G Taiwan Semiconductor
Description: 600V, 7A, SINGLE N-CHANNEL POWER, Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ITO-220, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 46W (Tc), Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції TSM60NC620CI C0G за ціною від 53.80 грн до 194.63 грн
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TSM60NC620CI C0G | Taiwan Semiconductor Corporation |
 Description: 600V, 7A, SINGLE N-CHANNEL POWERInput Capacitance (Ciss) (Max) @ Vds: 506 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ITO-220 Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 3990 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC620CI C0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 7A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: 600V, 7A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 3990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 194.63 грн |
| 10+ | 120.98 грн |
| 100+ | 83.16 грн |
| 500+ | 62.83 грн |
| 1000+ | 57.93 грн |
| 2000+ | 53.80 грн |