TSM60NC620CI C0G Taiwan Semiconductor Corporation

Description: 600V, 7A, SINGLE N-CHANNEL POWER, Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ITO-220, Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 46W (Tc), Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.