TSM60NC980CH C5G Taiwan Semiconductor Corporation

Description: 600V, 4A, SINGLE N-CHANNEL POWER, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Packaging: Tube, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-251 (IPAK), Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 57W (Tc), Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA.