TSM60NC980CP ROG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 37.98 грн |
| 5000+ | 34.07 грн |
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Технічний опис TSM60NC980CP ROG Taiwan Semiconductor Corporation
Description: 600V, 4A, SINGLE N-CHANNEL POWER, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 57W (Tc), Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції TSM60NC980CP ROG за ціною від 38.12 грн до 135.31 грн
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TSM60NC980CP ROG | Taiwan Semiconductor Corporation |
Description: 600V, 4A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TSM60NC980CP ROG | Taiwan Semiconductor |
MOSFETs 600V, 4A, Single N-Channel Power MOSFET |
на замовлення 4477 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| TSM60NC980CP ROG |
|
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.31 грн |
| 10+ | 82.94 грн |
| 100+ | 55.95 грн |
| 500+ | 41.63 грн |
| 1000+ | 38.12 грн |
| TSM60NC980CP ROG |
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Виробник: Taiwan Semiconductor
MOSFETs 600V, 4A, Single N-Channel Power MOSFET
MOSFETs 600V, 4A, Single N-Channel Power MOSFET
на замовлення 4477 шт:
термін постачання 21-30 дні (днів)