TSM60NE048PW C0G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 12V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4.6mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5023 pF @ 300 V
Description: MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 12V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4.6mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5023 pF @ 300 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 936.98 грн |
| 10+ | 794.56 грн |
| 300+ | 665.75 грн |
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Технічний опис TSM60NE048PW C0G Taiwan Semiconductor Corporation
Description: MOSFET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 12V, Power Dissipation (Max): 431W (Tc), Vgs(th) (Max) @ Id: 6V @ 4.6mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5023 pF @ 300 V.
Інші пропозиції TSM60NE048PW C0G за ціною від 631.40 грн до 1068.17 грн
| Фото | Назва | Виробник | Інформація |
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Ціна | ||||||||||||||||
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TSM60NE048PW C0G | Виробник : Taiwan Semiconductor | MOSFETs 600V, 61A, Single N-Channel High Voltage MOSFETs |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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| TSM60NE048PW C0G | Виробник : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 61A; 431W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 61A Power dissipation: 431W Case: TO247 Gate-source voltage: ±30V On-state resistance: 48mΩ Mounting: THT Gate charge: 114nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |