TSM60NE180CIT C0G Taiwan Semiconductor
| Кількість | Ціна |
|---|---|
| 2+ | 228.05 грн |
| 10+ | 201.75 грн |
| 25+ | 168.53 грн |
| 100+ | 156.10 грн |
| 250+ | 152.64 грн |
| 2000+ | 129.16 грн |
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Технічний опис TSM60NE180CIT C0G Taiwan Semiconductor
Description: 600V, 13A, SINGLE N-CHANNEL HIGH, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 4.3A, 12V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 6V @ 1.8mA, Supplier Device Package: ITO-220TL, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 300 V.
Інші пропозиції TSM60NE180CIT C0G за ціною від 120.57 грн до 303.04 грн
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TSM60NE180CIT C0G | Виробник : Taiwan Semiconductor Corporation |
 Description: 600V, 13A, SINGLE N-CHANNEL HIGHPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 4.3A, 12V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.8mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 300 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE180CIT C0G | Виробник : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 63W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 63W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |