Технічний опис TSM680P06DPQ56 Taiwan Semiconductor
Description: MOSFET 2P-CH 60V 12A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.5W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V, Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6).
Інші пропозиції TSM680P06DPQ56
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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TSM680P06DPQ56 | Виробник : Taiwan Semiconductor |
 Dual P Channel MOSFET |
товару немає в наявності |
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| TSM680P06DPQ56 | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET 2P-CH 60V 12A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) |
товару немає в наявності |