Технічний опис TSM70N1R4CH C5G Taiwan Semiconductor Corporation
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 700V, Drain current: 2A, Power dissipation: 38W, Case: IPAK, Gate-source voltage: ±30V, On-state resistance: 1.4Ω, Mounting: THT, Gate charge: 7.7nC, Kind of package: tube, Kind of channel: enhancement.
Інші пропозиції TSM70N1R4CH C5G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| TSM70N1R4CH C5G | TAIWAN SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 2A Power dissipation: 38W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 7.7nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM70N1R4CH C5G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 2A; 38W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 7.7nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.