Продукція > TAIWAN SEMICONDUCTOR > TSM70N380CI C0G
TSM70N380CI C0G

TSM70N380CI C0G Taiwan Semiconductor

TSM70N380_E1706.pdf
Виробник: Taiwan Semiconductor
MOSFET 700V, 11A, Single N-Channel Power MOSFET
на замовлення 1888 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+274.04 грн
10+226.45 грн
25+185.66 грн
100+159.64 грн
250+150.50 грн
500+142.06 грн
1000+120.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис TSM70N380CI C0G Taiwan Semiconductor

Description: MOSFET N-CH 700V 11A ITO220AB, Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ITO-220AB, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.

Інші пропозиції TSM70N380CI C0G

Фото Назва Виробник Інформація Доступність
Ціна
TSM70N380CI C0G TSM70N380CI C0G Taiwan Semiconductor Corporation TSM70N380_E1706.pdf Description: MOSFET N-CH 700V 11A ITO220AB
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
TSM70N380CI C0G TSM70N380CI C0G TAIWAN SEMICONDUCTOR TSM70N380_E1706.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
TSM70N380CI C0G TSM70N380_E1706.pdf
TSM70N380CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 700V 11A ITO220AB
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
TSM70N380CI C0G TSM70N380_E1706.pdf
TSM70N380CI C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.6A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 18.8nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.