Технічний опис TSM70N900CH C5G Taiwan Semiconductor
Description: MOSFET N-CH 700V 4.5A TO251, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V.
Інші пропозиції TSM70N900CH C5G
| Фото | Назва | Виробник | Інформація |
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| TSM70N900CH C5G | Виробник : TAIWAN SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK Drain-source voltage: 700V Drain current: 2.7A On-state resistance: 0.9Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 9.7nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: IPAK кількість в упаковці: 1 шт |
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TSM70N900CH C5G | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 700V 4.5A TO251 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V |
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TSM70N900CH C5G | Виробник : Taiwan Semiconductor |
MOSFET 700V, 4.5A, Single N-Channel Power MOSFET |
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| TSM70N900CH C5G | Виробник : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.7A; 50W; IPAK Drain-source voltage: 700V Drain current: 2.7A On-state resistance: 0.9Ω Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 9.7nC Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: IPAK |
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