TSM70N900CH Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: 700V, 4.5A, SINGLE N-CHANNEL POW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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Технічний опис TSM70N900CH Taiwan Semiconductor Corporation
Description: 700V, 4.5A, SINGLE N-CHANNEL POW, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-251 (IPAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції TSM70N900CH
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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TSM70N900CH | Виробник : Taiwan Semiconductor |
 MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm |
товару немає в наявності |