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Технічний опис TSM7ND60CI Taiwan Semiconductor
Description: MOSFET N-CH 600V 7A ITO220, Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: ITO-220, Vgs(th) (Max) @ Id: 3.8V @ 250µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube.
Інші пропозиції TSM7ND60CI за ціною від 97.98 грн до 162.73 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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TSM7ND60CI | Taiwan Semiconductor |
 N Channel Power MOSFET |
на замовлення 3955 шт: термін постачання 21-31 дні (днів) |
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TSM7ND60CI | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 600V 7A ITO220 Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: ITO-220 Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
на замовлення 3962 шт: термін постачання 21-31 дні (днів) |
|
| TSM7ND60CI |
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Виробник: Taiwan Semiconductor
N Channel Power MOSFET
N Channel Power MOSFET
на замовлення 3955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 105+ | 135.31 грн |
| TSM7ND60CI |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 600V 7A ITO220
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ITO-220
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Description: MOSFET N-CH 600V 7A ITO220
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ITO-220
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
на замовлення 3962 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 162.73 грн |
| 50+ | 124.53 грн |
| 100+ | 106.74 грн |
| 500+ | 97.98 грн |