TSM85N10CZ C0G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 81A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Технічний опис TSM85N10CZ C0G Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 81A TO220, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 210W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 81A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції TSM85N10CZ C0G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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TSM85N10CZ C0G | Виробник : Taiwan Semiconductor |
 MOSFET 100V, 81A, Single N-Channel Power MOSFET |
товару немає в наявності |