TSM8N50CP ROG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 7.2A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис TSM8N50CP ROG Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 7.2A TO252, Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 89W (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції TSM8N50CP ROG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
TSM8N50CP ROG | Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 500V 7.2A TO252 Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM8N50CP ROG | Taiwan Semiconductor |
 MOSFET 500V 8 Amp N channel Mosfet |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM8N50CP ROG |
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 500V 7.2A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 500V 7.2A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TSM8N50CP ROG |
|
Виробник: Taiwan Semiconductor
MOSFET 500V 8 Amp N channel Mosfet
MOSFET 500V 8 Amp N channel Mosfet
товару немає в наявності
В кошику
од. на суму грн.