TSM900N06CH X0G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 11A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Description: MOSFET N-CHANNEL 60V 11A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
на замовлення 48594 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.72 грн |
| 75+ | 31.69 грн |
| 150+ | 23 грн |
| 525+ | 18.03 грн |
| 1050+ | 15.35 грн |
| 2025+ | 13.67 грн |
| 5025+ | 12.74 грн |
| 10050+ | 11.79 грн |
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Технічний опис TSM900N06CH X0G Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 11A TO251, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V.
Інші пропозиції TSM900N06CH X0G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TSM900N06CH X0G | Виробник : Taiwan Semiconductor |
 Trans MOSFET N-CH 60V 11A 3-Pin(3+Tab) TO-251S Tube |
товар відсутній |
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| TSM900N06CH X0G | Виробник : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 25W; IPAK SL Gate charge: 9.3nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: IPAK SL Drain-source voltage: 60V Drain current: 7A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
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TSM900N06CH X0G | Виробник : Taiwan Semiconductor | MOSFET 60V, 11A, Single N-Channel Power MOSFET |
товар відсутній |
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| TSM900N06CH X0G | Виробник : TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 25W; IPAK SL Gate charge: 9.3nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: IPAK SL Drain-source voltage: 60V Drain current: 7A On-state resistance: 90mΩ Type of transistor: N-MOSFET Power dissipation: 25W Polarisation: unipolar |
товар відсутній |