TSM900N06CH X0G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 11A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 112.36 грн |
| 10+ | 68.87 грн |
| 100+ | 45.89 грн |
| 500+ | 33.82 грн |
| 1000+ | 30.85 грн |
| 3750+ | 26.42 грн |
| 7500+ | 24.22 грн |
| 11250+ | 23.32 грн |
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Технічний опис TSM900N06CH X0G Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 11A TO251, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V.
Інші пропозиції TSM900N06CH X0G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TSM900N06CH X0G | Taiwan Semiconductor |
MOSFETs 60V, 11A, Single N-Channel Power MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM900N06CH X0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 25W; IPAK SL On-state resistance: 90mΩ Mounting: THT Power dissipation: 25W Gate charge: 9.3nC Polarisation: unipolar Drain current: 7A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: IPAK SL |
товару немає в наявності |
В кошику од. на суму грн. |
| TSM900N06CH X0G |
|
Виробник: Taiwan Semiconductor
MOSFETs 60V, 11A, Single N-Channel Power MOSFET
MOSFETs 60V, 11A, Single N-Channel Power MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| TSM900N06CH X0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 25W; IPAK SL
On-state resistance: 90mΩ
Mounting: THT
Power dissipation: 25W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: IPAK SL
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 25W; IPAK SL
On-state resistance: 90mΩ
Mounting: THT
Power dissipation: 25W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: IPAK SL
товару немає в наявності
В кошику
од. на суму грн.