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TSM900N10CH X0G

TSM900N10CH X0G Taiwan Semiconductor Corporation

TSM900N10_A15.pdf
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 100V 15A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
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Технічний опис TSM900N10CH X0G Taiwan Semiconductor Corporation

Description: MOSFET N-CH 100V 15A TO251, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V.

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TSM900N10CH X0G TSM900N10CH X0G Taiwan Semiconductor TSM900N10_A15.pdf MOSFETs 100V, 15A, Single N-Channel Power MOSFET
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TSM900N10CH X0G TAIWAN SEMICONDUCTOR TSM900N10_A15.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 50W; IPAK SL
Case: IPAK SL
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 9.3nC
On-state resistance: 90mΩ
Power dissipation: 50W
Drain current: 9.5A
Gate-source voltage: ±20V
Drain-source voltage: 100V
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TSM900N10CH X0G TSM900N10_A15.pdf
TSM900N10CH X0G
Виробник: Taiwan Semiconductor
MOSFETs 100V, 15A, Single N-Channel Power MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
TSM900N10CH X0G TSM900N10_A15.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 50W; IPAK SL
Case: IPAK SL
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 9.3nC
On-state resistance: 90mΩ
Power dissipation: 50W
Drain current: 9.5A
Gate-source voltage: ±20V
Drain-source voltage: 100V
товару немає в наявності
В кошику  од. на суму  грн.