TSM900N10CP ROG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 2500+ | 20.19 грн |
| 5000+ | 17.95 грн |
| 7500+ | 17.18 грн |
| 12500+ | 15.32 грн |
| 17500+ | 15.15 грн |
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Технічний опис TSM900N10CP ROG Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 100V 15A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V.
Інші пропозиції TSM900N10CP ROG за ціною від 16.20 грн до 87.98 грн
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TSM900N10CP ROG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET N-CHANNEL 100V 15A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V |
на замовлення 21119 шт: термін постачання 21-31 дні (днів) |
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TSM900N10CP ROG | Виробник : Taiwan Semiconductor |
MOSFETs 100V, 15A, Single N-Channel Power MOSFET |
на замовлення 8435 шт: термін постачання 21-30 дні (днів) |
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| TSM900N10CP ROG | Виробник : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 15A; 50W; DPAK,TO252; SMT Case: DPAK; TO252 Kind of channel: enhancement Technology: MOSFET Type of transistor: N-MOSFET Mounting: SMD Electrical mounting: SMT Gate charge: 9.3nC On-state resistance: 72mΩ Power dissipation: 50W Drain current: 15A Gate-source voltage: 20V Drain-source voltage: 100V |
на замовлення 17500 шт: термін постачання 14-30 дні (днів) |
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