TSM950N10CW RPG Taiwan Semiconductor
| Кількість | Ціна |
|---|---|
| 6+ | 57.54 грн |
| 10+ | 39.32 грн |
| 100+ | 24.24 грн |
| 500+ | 18.72 грн |
| 1000+ | 16.85 грн |
| 2500+ | 14.92 грн |
| 5000+ | 12.85 грн |
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Технічний опис TSM950N10CW RPG Taiwan Semiconductor
Description: MOSFET N-CH 100V 6.5A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V, Power Dissipation (Max): 9W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V.
Інші пропозиції TSM950N10CW RPG за ціною від 18.38 грн до 71.49 грн
| Фото | Назва | Виробник | Інформація |
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TSM950N10CW RPG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 100V 6.5A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V Power Dissipation (Max): 9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V |
на замовлення 1180 шт: термін постачання 21-31 дні (днів) |
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TSM950N10CW RPG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 100V 6.5A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V Power Dissipation (Max): 9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V |
товару немає в наявності |

