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TSUP10M60SH S1G

TSUP10M60SH S1G Taiwan Semiconductor

TSUP10M60SH_A1909-1919031.pdf
Виробник: Taiwan Semiconductor
Schottky Diodes & Rectifiers 10A, 60V TRENCH SCHOTTKY RECTIFIER
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
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Технічний опис TSUP10M60SH S1G Taiwan Semiconductor

Description: DIODE SCHOTTKY 60V 10A SMPC4.6U, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 658pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: SMPC4.6U, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A, Current - Reverse Leakage @ Vr: 250 µA @ 60 V, Qualification: AEC-Q101.

Інші пропозиції TSUP10M60SH S1G

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
TSUP10M60SH S1G TSUP10M60SH S1G Taiwan Semiconductor Corporation TSUP10M60SH_B2103.pdf Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
TSUP10M60SH S1G TSUP10M60SH S1G Taiwan Semiconductor Corporation TSUP10M60SH_B2103.pdf Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
TSUP10M60SH S1G TSUP10M60SH_B2103.pdf
TSUP10M60SH S1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
TSUP10M60SH S1G TSUP10M60SH_B2103.pdf
TSUP10M60SH S1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 658pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.