| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.43 грн |
| 10+ | 33.26 грн |
| 100+ | 21.26 грн |
| 500+ | 16.71 грн |
| 1000+ | 12.91 грн |
| 3000+ | 10.56 грн |
| 9000+ | 9.80 грн |
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Технічний опис TT8K11TCR ROHM Semiconductor
Description: MOSFET 2N-CH 30V 3A 8TSST, Supplier Device Package: 8-TSST, Vgs(th) (Max) @ Id: 2.5V @ 1A, FET Feature: Logic Level Gate, 4V Drive, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V, Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 3A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Інші пропозиції TT8K11TCR за ціною від 14.30 грн до 57.47 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TT8K11TCR | Rohm Semiconductor |
 Description: MOSFET 2N-CH 30V 3A 8TSSTPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.5V @ 1A Supplier Device Package: 8-TSST |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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| TT8K11TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3A 8TSST
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1A
Supplier Device Package: 8-TSST
Description: MOSFET 2N-CH 30V 3A 8TSST
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 1A
Supplier Device Package: 8-TSST
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.47 грн |
| 10+ | 34.25 грн |
| 100+ | 22.15 грн |
| 500+ | 15.88 грн |
| 1000+ | 14.30 грн |