TT8M3TR
Виробник:
на замовлення 3000 шт:
термін постачання 14-28 дні (днів)
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Технічний опис TT8M3TR
Description: MOSFET N/P-CH 20V 2.5A 8TSST, Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR), Supplier Device Package: 8-TSST, Vgs(th) (Max) @ Id: 1V @ 1mA, FET Feature: Logic Level Gate, 1.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V.
Інші пропозиції TT8M3TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
TT8M3TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 20V 2.5A 8TSST Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V FET Feature: Logic Level Gate, 1.5V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 8-TSST |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
TT8M3TR | Rohm Semiconductor |
Description: MOSFET N/P-CH 20V 2.5A 8TSST Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A Drain to Source Voltage (Vdss): 20V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) Supplier Device Package: 8-TSST Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate, 1.5V Drive Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
TT8M3TR | ROHM Semiconductor |
MOSFETs 1.5V Drive Nch+Pch MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| TT8M3TR |
|
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 2.5A 8TSST
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-TSST
Description: MOSFET N/P-CH 20V 2.5A 8TSST
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 8-TSST
товару немає в наявності
В кошику
од. на суму грн.
| TT8M3TR |
|
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 2.5A 8TSST
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-TSST
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Description: MOSFET N/P-CH 20V 2.5A 8TSST
Current - Continuous Drain (Id) @ 25°C: 2.5A, 2.4A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-TSST
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 72mOhm @ 2.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
товару немає в наявності
В кошику
од. на суму грн.
| TT8M3TR |
|
Виробник: ROHM Semiconductor
MOSFETs 1.5V Drive Nch+Pch MOSFET
MOSFETs 1.5V Drive Nch+Pch MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.