TUAU6JH M3G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A SMPC4.6U
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 64pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 42.92 грн |
| 3000+ | 38.91 грн |
Відгуки про товар
Написати відгук
Технічний опис TUAU6JH M3G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A SMPC4.6U, Current - Reverse Leakage @ Vr: 5 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SMPC4.6U, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 64pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).
Інші пропозиції TUAU6JH M3G за ціною від 47.62 грн до 97.64 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TUAU6JH M3G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 6A SMPC4.6U Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: SMPC4.6U Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 64pF @ 4V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Technology: Standard Reverse Recovery Time (trr): 50 ns |
на замовлення 4204 шт: термін постачання 21-31 дні (днів) |
|
| TUAU6JH M3G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A SMPC4.6U
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 64pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Description: DIODE GEN PURP 600V 6A SMPC4.6U
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SMPC4.6U
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 64pF @ 4V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Technology: Standard
Reverse Recovery Time (trr): 50 ns
на замовлення 4204 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.64 грн |
| 10+ | 77.01 грн |
| 100+ | 59.87 грн |
| 500+ | 47.62 грн |