Технічний опис UCC27200QDDARQ1 TI
Description: IC GATE DRVR HALF-BRIDGE 8SOPWR, Qualification: AEC-Q100, Grade: Automotive, DigiKey Programmable: Not Verified, Part Status: Active, Current - Peak Output (Source, Sink): 3A, 3A, Logic Voltage - VIL, VIH: 3V, 8V, Gate Type: MOSFET (N-Channel), Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Independent, Rise / Fall Time (Typ): 8ns, 7ns, Supplier Device Package: 8-SO PowerPad, High Side Voltage - Max (Bootstrap): 120 V, Input Type: Non-Inverting, Voltage - Supply: 8V ~ 17V, Operating Temperature: -40°C ~ 140°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції UCC27200QDDARQ1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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UCC27200QDDARQ1 | Виробник : Texas Instruments |
 Driver 3A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin HSOIC EP T/R Automotive AEC-Q100 |
товару немає в наявності |
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UCC27200QDDARQ1 | Виробник : Texas Instruments |
Driver 3A 2-OUT High Side/Low Side Full Brdg/Half Brdg Non-Inv 8-Pin HSOIC EP T/R Automotive AEC-Q100 |
товару немає в наявності |
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UCC27200QDDARQ1 | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SOPWR Qualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 3A, 3A Logic Voltage - VIL, VIH: 3V, 8V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 8ns, 7ns Supplier Device Package: 8-SO PowerPad High Side Voltage - Max (Bootstrap): 120 V Input Type: Non-Inverting Voltage - Supply: 8V ~ 17V Operating Temperature: -40°C ~ 140°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
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UCC27200QDDARQ1 | Виробник : Texas Instruments |
Gate Drivers 120V Boot 3A Peak Hi Freq Hi/Lo-Side Drvr |
товару немає в наявності |